A 220GHz Solid-State Power Amplifier MMIC with 26.8dB S21 Gain, and 55.5mW Pout at 17.0dB Compressed Gain
نویسندگان
چکیده
A 220GHz solid-state power amplifier MMIC is presented, simultaneously demonstrating 55.5mW output power Pout at 17.0dB compressed gain (1.12mW Pin). The maximum saturated Pout is 60mW at 14.0dB compressed gain (2.36mW Pin). This 3-stage, 4-cell amplifier has 26.8dB S21 gain at 220GHz, with 3-dB small-signal bandwidth from at least 210GHz to 235GHz. PDC is 3.38W. Amplifier cells were fabricated from a 250nm InP HBT technology, jointly with a substrate-shielded, thin-film microstrip wiring environment using BCB. The 55-60mW Pout is achieved by combining four amplifier cascode cells. The use of three gain stages significantly relaxes the RF source power requirements, where only 1.12mW Pin is needed to achieve 55.5mW Pout, and 2.36mW Pin to achieve 60mW fully saturated Pout. This represents at least 5-6dB gain improvement to state-ofthe-art for 220GHz SSPAs when operated at similar output powers. Over 20GHz bandwidth, at least 50mW Pout is observed from 205-225GHz.
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